High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology
High-Q Transformer Neutralization Technique for W-Band Dual-Band LNA Using 0.1 μm GaAs pHEMT Technology
심태주(한양대학교(ERICA캠퍼스)); Lee, Dongmin(한양대학교); Kim, Wansik(LIG넥스원); Kim, Kichul(국방과학연구소); Choi, Jeunwon(국방과학연구소); 김민수(목포대학교); Kim, Junghyun(한양대)
23권 6호, 482~489쪽
초록
In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.
Abstract
In this study, a dual-band low-noise amplifier (LNA) was implemented by applying a transformer-based neutralization technology to the W-band. Incorporating the neutralization technique was difficult owing to performance degradation in the W-band. However, circuit performance was enhanced thanks to the layout optimization of transformer-based neutralization networks, and the improved operation was confirmed in the W-band. The neutralization technique was implemented in four stages with a 0.1-μm gallium arsenide (GaAs) pseudomorphic high-electron-mobility-transistor monolithic microwave integrated circuit LNA. The LNA showed small signal gains of 20.3 dB and 21.7 dB and noise figures of 5.0 dB and 6.4 dB (at 84 GHz and 96 GHz, respectively) while consuming 46 mW from a 1-V supply.
- 발행기관:
- 한국전자파학회
- 분류:
- 전자/정보통신공학