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학술논문ETRI Journal2008.08 발행KCI 피인용 1

A 0.13 μm CMOS UWB RF Transmitter with an On-Chip T/R Switch

A 0.13 μm CMOS UWB RF Transmitter with an On-Chip T/R Switch

Chang-Wan Kim(Dong-A University); Quoc-Hoang Duong(Information and Communications University); Seung-Sik Lee(ETRI); Sang-Gug Lee(Information and Communications University)

30권 4호, 526~534쪽

초록

This paper presents a fully integrated 0.13 μm CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

Abstract

This paper presents a fully integrated 0.13 μm CMOS MB-OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low-pass filter, a variable gain amplifier, a voltage-to-current converter, an I/Q up-mixer, a differential-to-single-ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a -3 dB bandwidth of 550 MHz at each sub-band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply.

발행기관:
한국전자통신연구원
분류:
전자/정보통신공학

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A 0.13 μm CMOS UWB RF Transmitter with an On-Chip T/R Switch | ETRI Journal 2008 | AskLaw | 애스크로 AI