In-situ 도핑된 M/NEMS용 다결정 3C-SiC 박막의 특성
Characteristics of in-situ doped polycrystalline 3C-SiC thin films for M/NEMS applications
김강산(울산대학교); 정귀상(울산대학교)
17권 5호, 325~328쪽
초록
This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at 1200 oC using HMDS (hexamethyildisilane: Si2(CH3)6)) as Si and C precursor, and 0 ~ 100 sccm N2 as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on SiO2/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from 8.35 • cm with N2 of 0 sccm to 0.014 • cm with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from 3.0819 ´ 1017 to 2.2994 ´ 1019 cm3 and their electronic mobilities increased from 2.433 to 29.299 cm2/V • S, respectively.
Abstract
This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at 1200 oC using HMDS (hexamethyildisilane: Si2(CH3)6)) as Si and C precursor, and 0 ~ 100 sccm N2 as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on SiO2/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from 8.35 • cm with N2 of 0 sccm to 0.014 • cm with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from 3.0819 ´ 1017 to 2.2994 ´ 1019 cm3 and their electronic mobilities increased from 2.433 to 29.299 cm2/V • S, respectively.
- 발행기관:
- 한국센서학회
- 분류:
- 공학일반