A 0.18-μm CMOS UWB LNA Combined with High-Pass-Filter
A 0.18-μm CMOS UWB LNA Combined with High-Pass-Filter
김정연(동아대학교); 김창완(동아대학교)
9권 1호, 7~10쪽
초록
An Ultra-WideBand(UWB) Low-Noise Amplifier(LNA) is proposed and is implemented in a 0.18-μm CMOS technology. The proposed UWB LNA provides excellent wideband characteristics by combining a High-Pass Filter (HPF) with a conventional resistive-loaded LNA topology. In the proposed UWB LNA, the bell-shaped gain curve of the overall amplifier is much less dependent on the frequency response of the HPF embedded in the input stage. In addition, the adoption of fewer on-chip inductors in the input matching network permits a lower noise figure and a smaller chip area. Measurement results show a power gain of +10 dB and an input return loss of more than －9 dB over 2.7 to 6.2 GHz, a noise figure of 3.1 dB at 3.6 GHz and 7.8 dB at 6.2 GHz, an input P1dB of －12 dBm, and an IIP3 of －0.2 dBm, while dissipating only 4.6 mA from a 1.8-V supply.
Abstract
An Ultra-WideBand(UWB) Low-Noise Amplifier(LNA) is proposed and is implemented in a 0.18-μm CMOS technology. The proposed UWB LNA provides excellent wideband characteristics by combining a High-Pass Filter (HPF) with a conventional resistive-loaded LNA topology. In the proposed UWB LNA, the bell-shaped gain curve of the overall amplifier is much less dependent on the frequency response of the HPF embedded in the input stage. In addition, the adoption of fewer on-chip inductors in the input matching network permits a lower noise figure and a smaller chip area. Measurement results show a power gain of +10 dB and an input return loss of more than －9 dB over 2.7 to 6.2 GHz, a noise figure of 3.1 dB at 3.6 GHz and 7.8 dB at 6.2 GHz, an input P1dB of －12 dBm, and an IIP3 of －0.2 dBm, while dissipating only 4.6 mA from a 1.8-V supply.
- 발행기관:
- 한국전자파학회
- 분류:
- 전자/정보통신공학