Synthesis of Mn-doped Zn2SiO4 phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics
Synthesis of Mn-doped Zn2SiO4 phosphor particles by solid-state method at relatively low temperature and their photoluminescence characteristics
이진화(충북대학교); 최성옥((주)동양유지); 이동규(충북대학교)
11권 1호, 228~233쪽
초록
Mn-doped Zn2SiO4 phosphor particles having submicrometer sizes were synthesized by a solid-state reaction method using methyl hydrogen polysiloxane-treated ZnO, fumed SiO2 and various Mn sources. The crystallization and photoluminescent properties of the phosphor particles were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), and by their photoluminescence(PL) spectra. Due to the effect of the dispersion and coherence of the methyl hydrogen polysiloxane-treated ZnO, the Mn-doped Zn2SiO4 particles were successfully obtained by a solid state method at 1000℃, and the maximum PL intensity of the prepared particles under vacuum ultra violet(VUV) excitation occurred at a Mn concentration of 0.02mol and a sintering temperature of 1000℃.
Abstract
Mn-doped Zn2SiO4 phosphor particles having submicrometer sizes were synthesized by a solid-state reaction method using methyl hydrogen polysiloxane-treated ZnO, fumed SiO2 and various Mn sources. The crystallization and photoluminescent properties of the phosphor particles were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM), and by their photoluminescence(PL) spectra. Due to the effect of the dispersion and coherence of the methyl hydrogen polysiloxane-treated ZnO, the Mn-doped Zn2SiO4 particles were successfully obtained by a solid state method at 1000℃, and the maximum PL intensity of the prepared particles under vacuum ultra violet(VUV) excitation occurred at a Mn concentration of 0.02mol and a sintering temperature of 1000℃.
- 발행기관:
- 한국산학기술학회
- 분류:
- 공학일반