펄스 레이저 증착법으로 제작된 Bi2O3-MgO-ZnO-Nb2O5 박막의 제작 및 특성 분석

Pulsed laser deposition　is a very efficient technique for fabricating thin films of complex compounds. In the present work, Bi2O3-MgO-ZnO-Nb2O5 (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than 400℃ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above 500℃. From AFM, it was known that the thin film grown at 400℃ is the densest. Dielectric constant increased with increasing temperature up to 400℃ at 100 ㎑ and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at 400℃ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 ㎑.