Electroluminescence enhancement of (1122) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
Electroluminescence enhancement of (1122) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
배시영(광주과학기술원); D.S. Lee(Gwangju Institute of Science and Technology); B.H. Kong(Sungkyunkwan University); H.K. Cho(Sungkyunkwan University); J.F. Kaeding(University of California); S. Nakamura(University of California); S.P. DenBaars(University of California); J.S. Speck(University of California)
11권 3호, 954~958쪽
초록
(1122) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1° to ＋1°. While the coexistence of (1122) surface and inclined ｛1011｝surfaces was observed on GaN films on the on-axis m-plane sapphire substrates,｛1011｝surfaces were dominant on the GaN films on the ＋1° miscut sapphire substrates. As the miscut angle was changed from -1° to ＋1°, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.
Abstract
(1122) semipolar GaN thin films were grown on intentionally miscut m-plane sapphire substrates using metal organic chemical vapor deposition. We investigated the material and electrical characteristics by changing the miscut angle from -1° to ＋1°. While the coexistence of (1122) surface and inclined ｛1011｝surfaces was observed on GaN films on the on-axis m-plane sapphire substrates,｛1011｝surfaces were dominant on the GaN films on the ＋1° miscut sapphire substrates. As the miscut angle was changed from -1° to ＋1°, the crystallinity of the GaN films and the electroluminescence intensity of the LEDs were significantly improved.
- 발행기관:
- 한국물리학회
- 분류:
- 물리학