Schottky Characteristics of Pt Contacts on (11-22) Semipolar n-Type GaN Grown on m-Plane Sapphire Substrates
Schottky Characteristics of Pt Contacts on (11-22) Semipolar n-Type GaN Grown on m-Plane Sapphire Substrates
Sungmin Jung(Chonbuk National University); Sung-Nam Lee(Korea Polytechnic University); 안광순(Yeungnam University); 김현수(전북대학교)
8권 1호, 17~20쪽
초록
The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10−3A/cm2and 2.19, respectively, as a result of the strong leakage components in the current-voltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.
Abstract
The Schottky characteristics of Pt contacts fabricated on (11-22) semipolar n-type GaN were investigated. The saturation current density and the ideality factors obtained using the thermionic emission model were as large as 2.2 × 10−3A/cm2and 2.19, respectively, as a result of the strong leakage components in the current-voltage curves. The barrier inhomogeneity model applied to the temperature dependent electrical data exhibited a mean barrier height of 1.1 eV with a large standard deviation of 169 meV. The thermionic field emission model yielded reliable Schottky parameters including a tunneling parameter of 0.054 eV and a Schottky barrier height of 1.23 eV.
- 발행기관:
- 대한금속·재료학회
- 분류:
- 전자/정보통신공학