Investigation of a.c. conductivity measurements in a-Se80Te20 and a-Se80Te10M10 (M = Cd, in, Sb) alloys using correlated barrier hopping model
Investigation of a.c. conductivity measurements in a-Se80Te20 and a-Se80Te10M10 (M = Cd, in, Sb) alloys using correlated barrier hopping model
N. Chandel(Banaras Hindu University); N. Mehta(Banaras Hindu University); A. Kumar(Harcourt Butler Technological Institute)
12권 2호, 405~412쪽
초록
The a.c. conductivity of a-Se80Te20 and a-Se80Te10M10 (M ¼ Cd, In, Sb) alloys has been investigated as a function of temperature in the range from 280 to 330 K and frequency in the range from 102 to 104 Hz. The experimental results indicate that a.c. conductivity sac is proportional to us where s < 1 and decreases with increasing temperature. The results obtained are discussed in terms of the correlated barrier hopping (CBH) model. An agreement between experimental and theoretical results suggests that the a.c. conductivity behavior of a-Se80Te20 and a-Se80Te10M10 (M ¼ Cd, In, Sb) system can be successfully explained by CBH model. The contribution of single polaron and bipolaron hopping to a.c. conductivity in present alloys is also studied.
Abstract
The a.c. conductivity of a-Se80Te20 and a-Se80Te10M10 (M ¼ Cd, In, Sb) alloys has been investigated as a function of temperature in the range from 280 to 330 K and frequency in the range from 102 to 104 Hz. The experimental results indicate that a.c. conductivity sac is proportional to us where s < 1 and decreases with increasing temperature. The results obtained are discussed in terms of the correlated barrier hopping (CBH) model. An agreement between experimental and theoretical results suggests that the a.c. conductivity behavior of a-Se80Te20 and a-Se80Te10M10 (M ¼ Cd, In, Sb) system can be successfully explained by CBH model. The contribution of single polaron and bipolaron hopping to a.c. conductivity in present alloys is also studied.
- 발행기관:
- 한국물리학회
- 분류:
- 물리학