Analysis of Interface States and Series Resistance in Ag/m-Plane ZnO Schottky Diodes
Analysis of Interface States and Series Resistance in Ag/m-Plane ZnO Schottky Diodes
김호경(서울과학기술대학교); 김해리(이화여자대학교); 김동욱(이화여자대학교)
63권 10호, 2034~2038쪽
초록
The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I−V ) and capacitance-voltage (C−V ) measurements. The measured C −V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I − V characteristics were found to vary from 1.72 × 1013 eV<sup>-1</sup>cm<sup>-2</sup> at EC-0.32 eV to 1.68 × 10<sup>12</sup> eV<sup>-1</sup>cm<sup>-2</sup> at EC-0.54 eV. The interface state densities from the conductance-frequency (G/ω − f) characteristics also were within this range. The series resistance vs. voltage (RS − V ) plot showed a peak in the small forward bias region (0 ~ 0.5 V), which was attributed to the contribution of interface states to the series resistance.
Abstract
The effect of interfaces states on the electrical properties in Ag/m-plane ZnO Schottky contacts was investigated using both current-voltage (I−V ) and capacitance-voltage (C−V ) measurements. The measured C −V characteristics showed strong dependences on the bias voltage and frequency. The interface state densities from the I − V characteristics were found to vary from 1.72 × 1013 eV<sup>-1</sup>cm<sup>-2</sup> at EC-0.32 eV to 1.68 × 10<sup>12</sup> eV<sup>-1</sup>cm<sup>-2</sup> at EC-0.54 eV. The interface state densities from the conductance-frequency (G/ω − f) characteristics also were within this range. The series resistance vs. voltage (RS − V ) plot showed a peak in the small forward bias region (0 ~ 0.5 V), which was attributed to the contribution of interface states to the series resistance.
- 발행기관:
- 한국물리학회
- 분류:
- 물리학