A D-Band Integrated Signal Source Based on SiGe 0.18 μm BiCMOS Technology

This work describes the development of a D-band (110–170 GHz) signal source based on a SiGe BiCMOS technology. This D-band signal source consists of a V-band (50–75 GHz) oscillator, a V-band amplifier, and a D-band frequency doubler. The V-band signal from the oscillator is amplified for power boost, and then the frequency is doubled for D-band signal generation. The V-band oscillator showed an output power of 2.7 dBm at 67.3 GHz. Including a buffer stage, it had a DC power consumption of 145 mW. The peak gain of the V-band amplifier was 10.9 dB, which was achieved at 64.0 GHz and consumed 110 mW of DC power. The active frequency doubler consumed 60 mW for D-band signal generation. The integrated D-band source exhibited a measured output oscillation frequency of 133.2 GHz with an output power of 3.1 dBm and a phase noise of -107.2 dBc/Hz at 10 MHz offset. The chip size is 900 × 1,890 μm2, including RF and DC pads.