Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy
Defect reduction in m-plane GaN on m-sapphire via lateral epitaxial overgrowth by hydride vapor phase epitaxy
김민호(한국폴리텍대학); 우서휘(한국폴리텍대학); 소병찬(한국폴리텍대학); 심광보(한양대학교); 남옥현(한국폴리텍대학)
17권 10호, 1015~1018쪽
초록
We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrowx-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN. The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN,which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis.
Abstract
We report on the improvement of the structural and optical properties of m-plane GaN layers on m-plane sapphire viaepitaxial lateral overgrowth (ELO) using hydride vapor phase epitaxy. The planar m-plane GaN was compared to ELO mplaneGaN with stripes patterned along the [1120] and [0001], respectively. The ELO m-plane GaN samples showed narrowx-ray rocking curves and more improved cathodoluminescence (CL) images compared with those of the planar m-plane GaN. The density of threading dislocations (TDs) and basal-plane stacking faults (BSFs) was decreased in the ELO m-plane GaN,which was confirmed by transmission electron microscopy (TEM) and Williamson - Hall (W-H) plot analysis.
- 발행기관:
- 청정에너지연구소
- 분류:
- 재료공학