Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy
Effect of nitridation on the orientation of GaN layer grown on m-sapphire substrates using hydride vapor phase epitaxy
원영종(한국산업기술대학교); 소병찬(한국산업기술대학교); 우서휘(한국산업기술대학교); 이동헌(한국산업기술대학교); 김민호(한국산업기술대학교); 남기범(Seoul Opto Device Co); 임수진(Seoul Opto Device Co); 심광보(한양대학교); 남옥현(한국산업기술대학교)
15권 2호, 61~65쪽
초록
This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases of the GaN layer changed from non-polar to semi-polar (11-22) through mixed phases of (10-1-3) and (11-22). The phase change with nitridation was attributed to the formation of the nanosized AlN protrusions with slanted facets. This was confirmed by X-ray photoelectron spectroscopy and atomic force microscopy.
Abstract
This study reports the effect of nitridation on the orientation of GaN layers grown on m-plane sapphire (Al2O3) substrates by hydride vapor phase epitaxy (HVPE). Non-polar (10-10) GaN layers were grown on m-sapphire without nitridation. With increasing nitridation time, the crystallographic phases of the GaN layer changed from non-polar to semi-polar (11-22) through mixed phases of (10-1-3) and (11-22). The phase change with nitridation was attributed to the formation of the nanosized AlN protrusions with slanted facets. This was confirmed by X-ray photoelectron spectroscopy and atomic force microscopy.
- 발행기관:
- 청정에너지연구소
- 분류:
- 재료공학