GaAsBi Quantum Dots for 1.55 μm Laser Diode
GaAsBi Quantum Dots for 1.55 μm Laser Diode
Mingxuan Zhang(University of Shanghai for Science and Technology); Liyao Zhang(University of Shanghai for Science and Technology); Zhongyue Zhang(University of Shanghai for Science and Technology); Peng Yu(University of Shanghai for Science and Technology); Shuang Yao(University of Shanghai for Science and Technology)
17권 2호, 181~187쪽
초록
Bi incorporations can reduce the bandgap of GaAs1-xBix. With a Bi content of 10.5%, GaAsBi is predicted to emit light at1.55 μm. However, high Bi incorporation is difficult for material growth and deteriorates the optical property of GaAsBi. In this work, a GaAsBi quantum dot (QD)/InAlAs structure on InP platform is proposed to fabricate 1.55 μm laser diodes. Strain distributions and band structures are calculated with different Bi contents and QD sizes using finite element method. High Bi contents and large QD sizes are beneficial for achieving long wavelengths. GaAsBi QD/InAlAs structures with alow Bi content of 5.6% and proper QD sizes, such as a diameter of 30 nm and a height of 6 nm, can emit light at 1.55 μm. The proposed structure can be realized by migration enhanced epitaxy and droplet epitaxy and provides a feasible way forfabricating GaAsBi based 1.55 μm laser diodes applied in fiber-optic communications.
Abstract
Bi incorporations can reduce the bandgap of GaAs1-xBix. With a Bi content of 10.5%, GaAsBi is predicted to emit light at1.55 μm. However, high Bi incorporation is difficult for material growth and deteriorates the optical property of GaAsBi. In this work, a GaAsBi quantum dot (QD)/InAlAs structure on InP platform is proposed to fabricate 1.55 μm laser diodes. Strain distributions and band structures are calculated with different Bi contents and QD sizes using finite element method. High Bi contents and large QD sizes are beneficial for achieving long wavelengths. GaAsBi QD/InAlAs structures with alow Bi content of 5.6% and proper QD sizes, such as a diameter of 30 nm and a height of 6 nm, can emit light at 1.55 μm. The proposed structure can be realized by migration enhanced epitaxy and droplet epitaxy and provides a feasible way forfabricating GaAsBi based 1.55 μm laser diodes applied in fiber-optic communications.
- 발행기관:
- 대한금속·재료학회
- 분류:
- 전자/정보통신공학