미스트 화학기상증착법을 이용한 c면, a면, m면, r면 사파이어 기판 위의 산화갈륨 박막 성장 연구
Growth of Gallium Oxide Thin Film on c-, a-, m-, r-Plane Sapphire Substrates Using Mist Chemical Vapor Deposition System
성기려(한국세라믹기술원 반도체소재센터); 조성호(한국세라믹기술원 반도체소재센터); 김경호(한국세라믹기술원); 신윤지(한국세라믹기술원); 정성민(한국세라믹기술원); 김태규(부산대학교); 배시영(한국세라믹기술원)
36권 1호, 74~80쪽
초록
Gallium oxide (Ga2O3) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600°C was applied for Ga2O3 thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga2O3 featured rhombohedral crystal structures and wellaligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga2O3-based electronics applications.
Abstract
Gallium oxide (Ga2O3) thin films were grown on c-, a-, m-, r-plane sapphire substrates using a mist chemical vapor deposition system. Various growth temperature range of 400~600°C was applied for Ga2O3 thin film deposition. Then, several structural properties were characterized such as film thickness, crystal phase, lattice orientation, surface roughness, and optical bandgap. Under the certain growth temperature of 500℃, all grown Ga2O3 featured rhombohedral crystal structures and wellaligned preferred orientation to sapphire substrate. The films grown on c-and r-plane sapphire substrates, showed low surface roughness and large optical bandgap compared to those on a-and m-plane substrates. Therefore, various sapphire orientation can be potentially applicable for future Ga2O3-based electronics applications.
- 발행기관:
- 한국전기전자재료학회
- 분류:
- 전기공학