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학술논문대한금속·재료학회지2025.08 발행

레이저 비전도성 페이스트(LNCP) 소재 최적화를 통한 상온 레이저 압착 접합(LABC) 기반 30 μm 피치 인터커넥션 신뢰성 향상

Reliability Enhancement of 30 μm-Pitch Interconnections via Room-Temperature Laser-Assisted Bonding with Compression (LABC) Using Optimized Laser Non-Conductive Paste (LNCP)

이가은(한국전자통신연구원); 최광성(한국전자통신연구원); 엄용성(한국전자통신연구원); 최광문(한국전자통신연구원); 장기석(한국전자통신연구원); 신정호(한국전자통신연구원); 이찬미(한국전자통신연구원); 오진혁(한국전자통신연구원); 김성철(한국전자통신연구원); 문석환(한국전자통신연구원); 윤호경(한국전자통신연구원); 임솔이(한국전자통신연구원); 이승윤(국립한밭대학교); 주지호(한국전자통신연구원)

63권 8호, 583~593쪽

초록

As the trend in advanced semiconductor packaging continues toward finer pitch and higherintegration, bonding technologies are increasingly expected to meet stricter thermal and mechanicalperformance requirements. However, conventional methods such as Thermo-Compression Bonding (TCB) oftenlead to problems including thermal stress, long processing times and limitations of fine-pitch bonding. Toovercome these challenges, this study introduces Room-Temperature Laser-Assisted Bonding with Compression(LABC), a next-generation bonding technique that enables localized heating and rapid cooling, minimizingthermal stress while improving alignment accuracy and process efficiency. To further enhance the electrical andmechanical reliability of LABC, we developed two types of Laser Non-Conductive Paste (LNCP), designatedLNCP-(A) and LNCP-(B). These eco-friendly materials, flux-free and solvent-free, not only prevent voidformation and fume generation but also eliminate the need for post-bond cleaning and underfill processes. Thebonding experiments were conducted on 30 μm-pitch daisy-chain bump structures formed on 11 mm × 7 mmsilicon chips, simulating High Bandwidth Memory (HBM). The glass transition temperatures (Tg) of LNCP-(A)and LNCP-(B) were measured to be 36.27 °C and 51.23 °C, respectively, via Differential Scanning Calorimetry(DSC). Following the bonding process, electrical resistance measurements, cross-sectional microstructuralanalysis, and temperature cycling (TC) tests were performed. LNCP-(B), with its higher Tg, exhibited improvedthermal stability and lower resistance variation compared to LNCP-(A). Furthermore, the LABC processeffectively suppressed intermetallic compound (IMC) growth, resulting in consistently thinner IMC thicknesscompared to those formed by TCB. In addition, shear strength testing confirmed the mechanical robustness ofthe bonded joints. These results demonstrate the effectiveness of LABC with optimized LNCP materials as apromising solution for high-reliability, fine-pitch interconnections in next-generation semiconductor packaging.

Abstract

As the trend in advanced semiconductor packaging continues toward finer pitch and higherintegration, bonding technologies are increasingly expected to meet stricter thermal and mechanicalperformance requirements. However, conventional methods such as Thermo-Compression Bonding (TCB) oftenlead to problems including thermal stress, long processing times and limitations of fine-pitch bonding. Toovercome these challenges, this study introduces Room-Temperature Laser-Assisted Bonding with Compression(LABC), a next-generation bonding technique that enables localized heating and rapid cooling, minimizingthermal stress while improving alignment accuracy and process efficiency. To further enhance the electrical andmechanical reliability of LABC, we developed two types of Laser Non-Conductive Paste (LNCP), designatedLNCP-(A) and LNCP-(B). These eco-friendly materials, flux-free and solvent-free, not only prevent voidformation and fume generation but also eliminate the need for post-bond cleaning and underfill processes. Thebonding experiments were conducted on 30 μm-pitch daisy-chain bump structures formed on 11 mm × 7 mmsilicon chips, simulating High Bandwidth Memory (HBM). The glass transition temperatures (Tg) of LNCP-(A)and LNCP-(B) were measured to be 36.27 °C and 51.23 °C, respectively, via Differential Scanning Calorimetry(DSC). Following the bonding process, electrical resistance measurements, cross-sectional microstructuralanalysis, and temperature cycling (TC) tests were performed. LNCP-(B), with its higher Tg, exhibited improvedthermal stability and lower resistance variation compared to LNCP-(A). Furthermore, the LABC processeffectively suppressed intermetallic compound (IMC) growth, resulting in consistently thinner IMC thicknesscompared to those formed by TCB. In addition, shear strength testing confirmed the mechanical robustness ofthe bonded joints. These results demonstrate the effectiveness of LABC with optimized LNCP materials as apromising solution for high-reliability, fine-pitch interconnections in next-generation semiconductor packaging.

발행기관:
대한금속·재료학회
분류:
재료공학

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레이저 비전도성 페이스트(LNCP) 소재 최적화를 통한 상온 레이저 압착 접합(LABC) 기반 30 μm 피치 인터커넥션 신뢰성 향상 | 대한금속·재료학회지 2025 | AskLaw | 애스크로 AI