원자층 증착법을 활용한 SnO₂의 두께에 따른 전자 이동도 분석
Understanding Electric Properties Thickness of SnO₂ with Atomic Layer Deposition
윤시원(충남대학교); 김기현(충남대학교 에너지과학기술대학원); 김민규(충남대학교); 정민지(충남대학교); 이원종(충남대학교); 한혜지(충남대학교); 장효식(충남대학교); 임종철(충남대학교)
46권 1호, 1~13쪽
초록
Wide-bandgap perovskite solar cells enable high open-circuit voltages, which are crucial for tandem solar cells, but suffer from increased recombination and stability issues owing to bandgap-induced structural and interfacial defects. We precisely tuned the SnO₂ thickness via atomic layer deposition and used time-resolved photoluminescence and pulsed-voltage space- charge-limited current analyses to investigate charge transport and recombination. These results reveal the critical influence of the electron transport layer (ETL) thickness on the electric field distribution and interfacial recombination, providing design guidelines for high-efficiency, stable tandem top cells. This study advances the development of next-generation photovoltaic devices.
Abstract
Wide-bandgap perovskite solar cells enable high open-circuit voltages, which are crucial for tandem solar cells, but suffer from increased recombination and stability issues owing to bandgap-induced structural and interfacial defects. We precisely tuned the SnO₂ thickness via atomic layer deposition and used time-resolved photoluminescence and pulsed-voltage space- charge-limited current analyses to investigate charge transport and recombination. These results reveal the critical influence of the electron transport layer (ETL) thickness on the electric field distribution and interfacial recombination, providing design guidelines for high-efficiency, stable tandem top cells. This study advances the development of next-generation photovoltaic devices.
- 발행기관:
- 한국태양에너지학회
- 분류:
- 기타공학